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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPC560B64x датащи(PDF) 64 Page - STMicroelectronics |
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SPC560B64x датащи(HTML) 64 Page - STMicroelectronics |
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64 / 133 page  Electrical characteristics SPC560B54x/6x 64/133 DocID15131 Rev 9 Figure 6. I/O input DC electrical characteristics definition VIL VIN VIH PDIx = ‘1 VDD VHYS (GPDI register of SIUL) PDIx = ‘0’ Table 16. I/O input DC electrical characteristics Symbol C Parameter Conditions(1) Value Unit Min Typ Max VIH SR P Input high level CMOS (Schmitt Trigger) —0.65VDD —VDD + 0.4 V VIL SR P Input low level CMOS (Schmitt Trigger) — 0.4 — 0.35VDD VHYS CC C Input hysteresis CMOS (Schmitt Trigger) —0.1VDD —— ILKG CC D Digital input leakage No injection on adjacent pin TA = 40 °C — 2 200 nA DTA = 25 °C — 2 200 DTA = 85 °C — 5 300 DTA = 105 °C — 12 500 PTA = 125 °C — 70 1000 WFI (2) SR P Wakeup input filtered pulse — — — 40 ns WNFI (2 ) SR P Wakeup input not filtered pulse — 1000 — — ns 1. VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified. 2. In the range from 40 to 1000 ns, pulses can be filtered or not filtered, according to operating temperature and voltage. |
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