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SCANPSC110F датащи(PDF) 18 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали SCANPSC110F
подробное описание детали  SCAN Bridge Hierarchical and Multidrop Addressable JTAG Port (IEEE1149.1 System Test Support)
PDF  29 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

SCANPSC110F датащи(HTML) 18 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 5)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.5V to +7.0V
DC Input Diode Current (I
IL)
V
I = −0.5V
−20 mA
V
I = VCC +0.5V
+20 mA
DC Input Voltage (V
I)
−0.5V to V
CC +0.5V
DC Output Diode Current (I
OK)
V
O = −0.5V
−20 mA
V
O = VCC +0.5V
+20 mA
DC Output Voltage (V
O)
−0.5V to V
CC +0.5V
DC Output Source/Sink Current (I
O)
±50 mA
DC V
CC or Ground Current
±50 mA
per Output Pin
DC Latchup Source or Sink Current
±300 mA
Junction Temperature
Ceramic
+175˚C
Storage Temperature
−65˚C to +150˚C
ESD Last Passing Voltage (Min)
4000V
Recommended Operating
Conditions
Supply Voltage (V
CC)
SCANPSC110F
4.5V to 5.5V
Input Voltage (V
I)
0VtoV
CC
Output Voltage (V
O)
0VtoV
CC
Operating Temperature (T
A)
Military
−55˚C to +125˚C
Minimum Input Edge Rate dV/dt
SCAN “F” Series Devices
125 mV/ns
V
IN from 0.8V to 2.0V
V
CC @ 4.5V, 5.5V
Note 5: Absolute maximum ratings are those values beyond which damage
to the device may occur. The databook specifications should be met, without
exception, to ensure that the system design is reliable over its power supply
temperature, and output/input loading variables. National does not recom-
mended operation of SCAN outside of recommended operation conditions.
DC Electrical Characteristics
Symbol
Parameter
V
CC
(V)
Military
Units
Conditions
T
A =
−55˚C to +125˚C
Guaranteed
Limits
V
IH
Minimum High
4.5
2.0
V
V
OUT = 0.1V or
Input Voltage
5.5
2.0
V
CC −0.1V
V
IL
Maximum Low
4.5
0.8
V
V
OUT = 0.1V or
Input Voltage
5.5
0.8
V
CC −0.1V
V
OH
Minimum High
4.5
4.4
I
OUT = −50 µA
(TCK
Ln, TMSLn,
Output Voltage
5.5
5.4
V
V
IN (TDIB, TMSB,
TDO
Ln)
TCK
B) = VIH
V
OH
Minimum High
4.5
3.7
I
OUT = −24 mA
(TCK
Ln, TMSLn,
Output Voltage
5.5
4.7
V
V
IN on S(0-5) and
TDO
Ln)
TDl
(1–3) = VIH,VIL
All Outputs Loaded
V
OH
Minimum High
4.5
3.15
V
I
OUT = −50 µA
(TDO
B)
Output Voltage
5.5
4.15
V
OH
Minimum High
4.5
2.4
V
I
OUT = −24 mA
(TDO
B)
Output Voltage
5.5
2.4
All Outputs Loaded
V
OL
Maximum Low
4.5
0.1
I
OUT = +50 µA
(TCK
Ln,TMSLn,
Output Voltage
5.5
0.1
V
V
IN (TDIB, TMSB,
TDO
Ln)
TCK
B) = VIL
V
OL
Maximum Low
4.5
0.50
I
OUT = +24 mA
(TCK
Ln ,TMSLn,
Output Voltage
5.5
0.50
V
V
IN on S(0–5) and
TDO
Ln)
TDI
(1–3) = VIH,VIL
All Outputs Loaded
V
OL
Maximum Low
4.5
0.1
V
I
OUT = +50 µA
(TDO
B)
Output Voltage
5.5
0.1
V
OL
Maximum Low
4.5
0.55
V
I
OUT = +48 mA
(TDO
B)
Output Voltage
5.5
0.55
All Outputs Loaded
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