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T1610H датащи(PDF) 4 Page - STMicroelectronics

номер детали T1610H
подробное описание детали  High thermal cycling performance
PDF  9 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T1610H датащи(HTML) 4 Page - STMicroelectronics

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Characteristics
T1610H
4/9
DocID024630 Rev 1
Figure 5. Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
Figure 6. Relative variation of holding and
latching current versus junction temperature
(typical values)
IGT,VGT [Tj]/ IGT,VGT [Tj=25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-30
-10
10
30
50
70
90
110
130
150
IGT Q1-Q2
IGT Q3
VGT
Tj(°C)
I , I [T ] / I , I [T = 25 °C]
HL
j
H
L
j
0.0
0.5
1.0
1.5
2.0
2.5
-50
-30
-10
10
30
50
70
90
110
130
150
IH
IL
T (°C)
j
Figure 7. Relative variation of dV/dt immunity
versus junction temperature (typical values)
Figure 8. Relative variation of critical rate of
decrease of main current (di/dt)c versus
junction temperature (typical values)
dV/dt [T ] / dV/dt [T = 150 °C]
jj
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
25
50
75
100
125
150
VD=VR=402 V
T (°C)
j
(dl/dt) [T ] / (dl/dt) [T = 150 °C]
jj
cc
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
25
50
75
100
125
150
T (°C)
j
Figure 9. Relative variation of critical rate of
decrease of main current (di/dt)c versus
reapplied (dV/dt)c
Figure 10. Surge peak on-state current versus
number of cycles
(dI/dt)c[(dV/dt)c]/Specified(dI/dt)c
0
1
2
3
0.1
1.0
10.0
100.0
(dV/dt c (V/µs)
)
I
(A)
TSM
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
1
10
100
1000
Non repetitive
Tj initial=25 °C
Non repetitive
Tj initial=25 °C
Repetitive
TC=133 °C
One cycle
t = 20 ms
Number of cycles



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