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T1610H датащи(PDF) 3 Page - STMicroelectronics

номер детали T1610H
подробное описание детали  High thermal cycling performance
PDF  9 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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T1610H датащи(HTML) 3 Page - STMicroelectronics

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T1610H
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
Value
Unit
VTM
ITM = 22.5 A, tp = 380 µs
Tj = 25 °C
MAX.
1.55
V
Vto
Threshold voltage
Tj = 150 °C
0.80
V
Rd
Dynamic resistance
Tj = 150 °C
22
m
IDRM,
IRRM
VD = VDRM, VR = VRRM
Tj = 25 °C
5
µA
Tj = 150 °C
2
mA
Table 5. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.0
°C/W
Rth(j-a)
Junction to ambient (AC)
60
°C/W
Figure 1. Maximum power dissipation versus
average on-state current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
P(W)
0
2
4
6
8
10
12
14
16
18
02468
10
12
14
16
I
(A)
T(RMS)
180°
I
(A)
T(RMS)
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
T (°C)
C
Figure 3. On-state rms current versus ambient
temperature (free air convection)
Figure 4. Relative variation of thermal
impedance versus pulse duration
I
(A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
T (°C)
a
K = [Z / R ]
th
th
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02
1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Z
th(j-c)
Z
th(j-a)
t (s)
p



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