T810T-8FP datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

T810T-8FP

4/9

DocID025736 Rev 2

Figure 5. On-state characteristics (maximum

values)

Figure 6. Surge peak on-state current versus

number of cycles

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Tj max :

Vto = 0.85 V

Rd = 57 mW

Tj = 150 °C

Tj = 25 °C

V(V)

ITM(A)

100

1000

(A)

TSM

Non repetitive

Tj initial=25°C

Repetitive

TC= 113 °C

One cycle

t = 20 ms

Number of cycles

Figure 7. Non repetitive surge peak on-state

current and corresponding values of I2t

Figure 8. Relative variation of gate trigger

current and gate voltage versus junction

temperature (typical values)

ITSM(A), I²t (A²s)

100

1000

0.01

0.10

1.00

10.00

dI/dt limitation: 100 A/µs

ITSM

I²t

Tj initial=25°C

t (ms)

Sinusoidal pulse with width t <10 ms

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

100

125

150

Tj(°C)

IGT,VGT [Tj]/ IGT,VGT [Tj=25 °C]

IGT Q1-Q2

IGT Q3

VGT

Figure 9. Relative variation of static dV/dt

immunity versus junction temperature (typical

values)

Figure 10. Relative variation of holding and

latching current versus junction temperature

(typical values)

T (°C)

100

125

150

dV/dt [T

j ]/ dV/dt[Tj =150 °C]

VD = VR = 402 V ; 150°C

VD = VR = 536 V ; 125°C

T (°C)

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

IH,IL [Tj ]/ IH,IL [T

=25 °C]

T (°C)

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