T810T-8FP datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

T810T-8FP

2/9

DocID025736 Rev 2

Characteristics

Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

IT(rms)

On-state rms current (full sine wave)

Tc = 113°C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

F = 60 Hz

t = 16.7 ms

I²tI²t value for fusing, Tj initial = 25 °C

tp = 10 ms

A²s

VDRM,

VRRM

Repetitive surge peak off-state voltage

Tj = 150 °C

600

Tj = 125 °C

800

VDSM,

VRSM

Non repetitive surge peak off-state voltage

tp = 10 ms

900

dI/dt

Critical rate of rise of on-state

current IG = 2 x IGT, tr ≤ 100 ns

F = 100 Hz

100

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

PG(AV)

Average gate power dissipation

Tj = 150 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

°C

Maximum lead temperature for soldering during 10 s

260

°C

Vins

Insulation rms voltage, 1 minute

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

VD = 12 V, RL = 30 Ω

I - II - III

Min.

0.5

Max.

VGT

VD = 12 V, RL = 30 Ω

I - II - III

Max.

1.3

VGD

VD = VDRM, RL = 3.3 k Ω , Tj = 150 °C

I - II - III

Min.

0.2

(1)

For both polarities of A2 referenced to A1

IT = 500 mA

Max.

IG = 1.2 IGT

I - III

Max.

dV/dt (1)

VD = VR = 536 V, gate open

Tj = 125 °C

Min.

250

V/µs

VD = VR = 402 V, gate open

Tj = 150 °C

170

V/µs

(dI/dt)c (1)

(dV/dt)c

= 0.1 V/µs

Tj = 125 °C

Min.

6.0

A/ms

Tj = 150 °C

4.2

(dI/dt)c (1)

(dV/dt)c

= 10 V/µs

Tj = 125 °C

Min.

3.2

A/ms

Tj = 150 °C

1.4

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