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STU7N65M2 датащи(PDF) 5 Page - STMicroelectronics

номер детали STU7N65M2
подробное описание детали  N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™M2 Power MOSFETs in TO-220 and IPAK packages
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU7N65M2 датащи(HTML) 5 Page - STMicroelectronics

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STP7N65M2, STU7N65M2
Electrical characteristics
DocID026788 Rev 3
5/18
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
5
A
ISDM
(1)
Source-drain current
(pulsed)
-
20
A
VSD
(2)
Forward on voltage
ISD = 5 A, VGS = 0
-
1.6
V
trr
Reverse recovery
time
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21:
"Switching time waveform")
-
275
ns
Qrr
Reverse recovery
charge
-
1.62
µC
IRRM
Reverse recovery
current
-
11.8
A
trr
Reverse recovery
time
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21: "Switching time
waveform")
-
430
ns
Qrr
Reverse recovery
charge
-
2.54
µC
IRRM
Reverse recovery
current
-
11.9
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%



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