STL8P2UH7

Electrical characteristics

DocID025128 Rev 2

5/14

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

8

A

(1)

Source-drain current

(pulsed)

-

32

A

VSD

(2)

Forward on voltage

-

1

V

Reverse recovery time

di/dt = 100 A/

μs,

-

15.8

ns

Reverse recovery charge

-

5.9

nC

Reverse recovery current

-

0.7

A

Notes:

(1)

Pulse width limited by safe operating area.

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.