Electrical characteristics

STL8P2UH7

4/14

DocID025128 Rev 2

2

Electrical characteristics

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

20

V

Zero gate voltage

drain current

1

μA

Gate-body leakage

current

± 5

μA

Gate threshold

voltage

0.4

1

V

Static drain-source

on- resistance

0.0195

0.0225

Ω

0.02

0.025

Ω

0.036

0.043

Ω

0.05

0.085

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

f = 1 MHz

-

2390

-

pF

Output capacitance

-

220

-

pF

Reverse transfer

capacitance

-

188

-

pF

Total gate charge

-

22

-

nC

Gate-source charge

-

4.2

-

nC

Gate-drain charge

-

3.6

-

nC

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Uni

t

Turn-on delay time

-

12.5

-

ns

Rise time

-

30.5

-

ns

Turn-off delay time

-

128

-

ns

Fall time

-

84.5

-

ns