STIPN2M50-H datasheet(10/21 Pages) STMICROELECTRONICS

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Electrical characteristics

STIPN2M50-H

10/21

DocID030065 Rev 4

Table 12: Op-amp characteristics (VCC = 15 V unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Vio

Input offset voltage

Vic = 0 V, Vo = 7.5 V

Iio

Input offset current

Vic = 0 V, Vo = 7.5 V

Iib

Input bias current (1)

100

200

VOL

Low level output voltage

= 10 kΩ to VCC

150

VOH

High level output voltage

RL =

10 kΩ to GND

14.7

Output short-circuit current

Source, Vid = +1 V; Vo = 0 V

Sink, Vid = -1 V; Vo = VCC

Slew rate

Vi = 1 - 4 V; CL = 100 pF;

unity gain

2.5

3.8

V/µs

GBWP

Gain bandwidth product

Vo = 7.5 V

MHz

Avd

Large signal voltage gain

= 2 kΩ

SVR

Supply voltage rejection

ratio

vs. VCC

CMRR

Common mode rejection

ratio

Notes:

(1)The direction of the input current is out of the IC.

Table 13: Sense comparator characteristics (VCC = 15 V unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Iib

Input bias current

VCIN = 1 V

µA

Vod

Open-drain low level output

voltage

Iod = 3 mA

0.5

RON_OD

Open-drain low level output

resistance

Iod = 3 mA

166

Ω

RPD_SD

̅̅̅̅ pull-down resistor (1)

125

kΩ

td_comp

Comparator delay

̅̅̅̅/OD pulled to 5 V

through 100 kΩ resistor

130

Slew rate

CL = 180 pF; Rpu

= 5 kΩ

V/µs

tsd

Shutdown to high / low-side

driver propagation delay

VOUT = 0, Vboot = VCC,

VIN = 0 to 3.3 V

125

200

tisd

Comparator triggering to high /

low-side driver turn-off

propagation delay

Measured applying a

voltage step from 0 V to

3.3 V to pin CIN

200

250

Notes:

(1)Equivalent values as a result of the resistances of three drivers in parallel.

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