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STP18N65M2 датащи(PDF) 3 Page - STMicroelectronics

номер детали STP18N65M2
подробное описание детали  Extremely low gate charge
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP18N65M2 датащи(HTML) 3 Page - STMicroelectronics

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DocID026870 Rev 2
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STI18N65M2, STP18N65M2
Electrical ratings
15
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
12
A
ID
Drain current (continuous) at TC = 100 °C
8
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
48
A
PTOT
Total dissipation at TC = 25 °C
110
W
dv/dt (2)
2.
ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt(3)
3.
VDS ≤ 520V
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
1.14
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
2A
EAS
Single pulse avalanche energy
(starting Tj =25 °C, ID =IAR; VDD =50V)
450
mJ



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