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STP18N65M2 датащи(PDF) 1 Page - STMicroelectronics

номер детали STP18N65M2
подробное описание детали  Extremely low gate charge
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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This is information on a product in full production.
January 2015
DocID026870 Rev 2
1/15
STI18N65M2, STP18N65M2
N-channel 650 V, 0.275
Ω typ., 12 A MDmesh™ M2
Power MOSFET in I²PAK and TO-220 packages
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
, TAB
TO-220
1
2
3
TAB
I2PAK
1
2
3
TAB
Order code
VDS
RDS(on) max
ID
STI18N65M2
650V
0.33
Ω
12 A
STP18N65M2
Table 1. Device summary
Order code
Marking
Package
Packaging
STI18N65M2
18N65M2
I2PAK
Tube
STP18N65M2
TO-220
www.st.com


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