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STU7N60M2 датащи(PDF) 5 Page - STMicroelectronics

номер детали STU7N60M2
подробное описание детали  Extremely low gate charge
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STU7N60M2 датащи(HTML) 5 Page - STMicroelectronics

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STD7N60M2, STP7N60M2, STU7N60M2
Electrical characteristics
21
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
5
20
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 5 A, VGS = 0
-
1.6
V
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 18)
-
275
ns
Qrr
Reverse recovery charge
-
1.55
nC
IRRM
Reverse recovery current
-
11
A
trr
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 18)
-
376
ns
Qrr
Reverse recovery charge
-
2.1
nC
IRRM
Reverse recovery current
-
11
A



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