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STU7N60M2 датащи(PDF) 3 Page - STMicroelectronics

номер детали STU7N60M2
подробное описание детали  Extremely low gate charge
PDF  21 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STU7N60M2 датащи(HTML) 3 Page - STMicroelectronics

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DocID024622 Rev 1
3/21
STD7N60M2, STP7N60M2, STU7N60M2
Electrical ratings
21
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
5
A
ID
Drain current (continuous) at TC = 100 °C
3.5
A
IDM
(1)
Drain current (pulsed)
20
A
PTOT
Total dissipation at TC = 25 °C
60
W
dv/dt (1)
1.
ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Peak diode recovery voltage slope
15
V/ns
dv/dt(2)
2.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK TO-220 IPAK
Rthj-case
Thermal resistance junction-case max
2.08
2.08
°C/W
Rthj-pcb
Thermal resistance junction-pcb max(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board
50
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
100
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax )
1.5
A
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50)
99
mJ



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