Electrical characteristics

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

4/23

DocID024993 Rev 2

2

Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage (V

GS

= 0)

I

D

= 1 mA

800

V

I

DSS

Zero gate voltage drain

current (V

GS

= 0)

V

DS

= 800 V

1

μA

V

DS

= 800 V T

j

=125 °C

50

μA

I

GSS

Gate body leakage current

(V

DS

= 0)

V

GS

= ± 20 V

±10

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 100 μA3

4

5

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 1 A

3.5

4.5

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

=100 V, f=1 MHz, V

GS

=0

-

105

-

pF

C

oss

Output capacitance

-

8

-

pF

C

rss

Reverse transfer

capacitance

-0.5

-

pF

C

o(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as C

oss

when

V

DS

increases from 0 to 80% V

DSS

Equivalent capacitance time

related

V

GS

= 0, V

DS

= 0 to 640 V

-16

-

pF

C

o(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent capacitance

energy related

-7

-

pF

R

G

Intrinsic gate resistance

f = 1 MHz, I

D

=0

-

18

-

Ω

Q

g

Total gate charge

V

DD

= 640 V, I

D

= 2 A

V

GS

=10 V

-9.5

-

nC

Q

gs

Gate-source charge

-

1.5

-

nC

Q

gd

Gate-drain charge

-

7.5

-

nC