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STF2N80K5 датащи(PDF) 3 Page - STMicroelectronics

номер детали STF2N80K5
подробное описание детали  N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
PDF  23 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STF2N80K5 датащи(HTML) 3 Page - STMicroelectronics

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DocID024993 Rev 2
3/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK,
TO-220,
IPAK
TO-220FP
V
GS
Gate- source voltage
30
V
I
D
Drain current (continuous) at T
C
= 25 °C
2
(1)
1.
For TO-220FP limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C
1.3
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
8
A
P
TOT
Total dissipation at T
C
= 25 °C
45
20
W
I
AR
Max current during repetitive or single pulse
avalanche (pulse width limited by T
jmax
)
0.5
A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
60.5
mJ
dv/dt
(3)
3.
I
SD
≤ 2 A, di/dt ≤ 100 A/μs, peak V
DS ≤
V
(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(4)
4.
V
DS
≤ 640 V
MOSFET dv/dt ruggedness
50
V/ns
T
j
Operating junction temperature
-55 to 150
°C
T
stg
Storage temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK TO-220FP TO-220 IPAK
R
thj-case
Thermal resistance junction-case
2.78
6.25
2.78
2.78
°C/W
R
thj-pcb
Thermal resistance junction-pcb
50
(1)
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu.
R
thj-amb
Thermal resistance junction-amb
62.5
100



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