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TDA7703 датащи(PDF) 14 Page - STMicroelectronics |
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TDA7703 датащи(HTML) 14 Page - STMicroelectronics |
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14 / 32 page ![]() Electrical specifications TDA7703 14/32 Rev 1 3.4 Electrical characteristics VCC = 5 V; Tamb = 27 °C; unless otherwise specified. 3.4.1 FM - section Table 6. FM - section Symbol Parameter Test condition Min Typ Max Units FM IMR mixer Rin Input resistance 90 130 170 k Ω IIP3 3rd order intercept point up to Vin/tone = 85 dBµV 121 dBµV FM AGC RFAGC-Thr RFAGC threshold, referred to mixer input; RF level min setting 85 dBµV max setting 91 Threshold steps 2 dB Threshold error -1.5 1.5 dB Threshold temperature drift 0.016 dB/K IFAGC-Thr IFAGC threshold, referred to mixer input; at tuned frequency RF level min setting 77 dBµV max setting 81 Threshold steps 2 dB Threshold error -1.5 1.5 dB Threshold temperature drift 0.016 dB/K Pin diode source current see note(1) 12 mA Pin diode sink current 3 20 µA Pin diode source current in constant current mode see note(1) 0.4 mA 1. The current is generated by a PTAT (Proportional To Absolute Temperature) source, and has therefore a temperature dependency described by: ΔI/Io = ΔT/To, with Io being the current at ambient temperature (25 °C) and To the ambient temperature (25°C) expressed in Kelvin, that is 298 K. |
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