STTH30R04-Y datasheet(4/10 Pages) STMICROELECTRONICS

номер детали	STTH30R04-Y

подробное описание детали	Low thermal resistance

PDF	10 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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4 / 10 page

Characteristics

STTH30R04-Y

4/10

DocID024454 Rev 1

Figure 5. Reverse recovery time versus

dIF/dt (typical values)

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

100

120

140

160

180

100

1000

RR(ns)

F= 30 A

R=320 V

j=125° C

j=25° C

dIF/dt(A/µs)

100

150

200

250

300

350

400

450

500

550

600

650

700

750

100

1000

RR(nC)

F= 30 A

R=320 V

j=125° C

j=25° C

dIF/dt(A/µs)

Figure 7. Relative variations of dynamic

parameters versus junction temperature

Figure 8. Transient peak forward voltage versus

dIF/dt (typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

150

F= 30 A

R=320 V

Tj(°C)

[T ]/Q

[T = 125° C] and I

[T ]/I

[T = 125° C]

0.5

1.5

2.5

3.5

4.5

100

150

200

250

300

350

400

450

500

VFp(V)

F=30 A

j=125 °C

dIF/dt(A/µs)

Figure 9. Forward recovery time versus dIF/dt

(typical values)

Figure 10. Junction capacitance versus reverse

voltage applied (typical values)

200

400

600

800

1000

1200

1400

1600

1800

2000

100

200

300

400

500

FR(ns)

F=30 A

FR=1.1 x VF max.

j=125°C

dIF/dt(A/µs)

100

1000

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

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