STTH30R04-Y datasheet(3/10 Pages) STMICROELECTRONICS

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DocID024454 Rev 1

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STTH30R04-Y

Characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -200 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -15 A/µs,

VR = 30 V, Tj = 25° C

100

IF = 1 A, IR = 1 A,

IRR = 0.25 A, Tj = 25° C

IRM

Reverse recovery current

IF = 30 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125° C

tfr

Forward recovery time

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

500

VFP

Forward recovery voltage

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

2.9

Figure 1. Conduction losses versus

average current

Figure 2. Forward voltage drop versus forward

current

PF(AV)(W)

d=tp/T

IF(AV)(A)

d = 0.05

d = 0.1

d = 0.2

d = 0.5

d = 1

IFM(A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

VFM(V)

TJ=25°C

TJ =25°C

(Maximum values)

TJ=150°C

(Typical values)

TJ=150°C

(Typical values)

TJ=150°C

(Maximum values)

TJ=150°C

(Maximum values)

Figure 3. Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4. Peak reverse recovery current versus

dIF/dt (typical values)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Zth(j-c)/Rth(j-c)

Single pulse

TO-220AC

DO-247

tp(s)

100

1000

RM(A)

F= 30 A

R=320 V

j=125° C

j=25° C

dIF/dt(A/µs)

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