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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F411RET6 датащи(PDF) 95 Page - STMicroelectronics |
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STM32F411RET6 датащи(HTML) 95 Page - STMicroelectronics |
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95 / 149 page  DocID026289 Rev 6 95/149 STM32F411xC STM32F411xE Electrical characteristics 123 Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading. 6.3.14 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Table 49. EMI characteristics for LQFP100 Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/84 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, conforming to IEC61967-2 0.1 to 30 MHz 19 dBµV 30 to 130 MHz 17 130 MHz to 1 GHz 12 SAE EMI Level 3.5 - Table 50. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C conforming to JESD22-A114 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C conforming to ANSI/ESD STM5.3.1 UFBGA100, UFQFPN48 4500 WLCSP49 3 400 LQPF64, LQFP100 3250 1. Guaranteed by characterization results. |
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