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STM32F303VB датащи(PDF) 122 Page - STMicroelectronics |
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STM32F303VB датащи(HTML) 122 Page - STMicroelectronics |
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122 / 148 page ![]() Electrical characteristics STM32F303xB STM32F303xC 122/148 DocID023353 Rev 13 PGA gain Non inverting gain value - -2 - - -4 - - -8 - - -16 - - Rnetwork R2/R1 internal resistance values in PGA mode (3) Gain=2 - 5.4/5.4 - k Ω Gain=4 - 16.2/5.4 - Gain=8 - 37.8/5.4 - Gain=16 - 40.5/2.7 - PGA gain error PGA gain error - -1% - 1% Ibias OPAMP input bias current - - - ±0.2(4) µA PGA BW PGA bandwidth for different non inverting gain PGA Gain = 2, Cload = 50pF, Rload = 4 K Ω -4 - MHz PGA Gain = 4, Cload = 50pF, Rload = 4 K Ω -2 - PGA Gain = 8, Cload = 50pF, Rload = 4 K Ω -1 - PGA Gain = 16, Cload = 50pF, Rload = 4 K Ω -0.5 - en Voltage noise density @ 1KHz, Output loaded with 4 K Ω -109 - @ 10KHz, Output loaded with 4 K Ω -43 - 1. Guaranteed by design. 2. The saturation voltage can be also limited by the Iload (drive current). 3. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 4. Mostly TTa I/O leakage, when used in analog mode. Table 77. Operational amplifier characteristics(1) (continued) Symbol Parameter Condition Min Typ Max Unit nV Hz ----------- |
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