AF2301P

20V P-Channel Enhancement Mode MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.1 Jul 20, 2004

2/4

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

-2.3

A

Pulsed Drain Current

-10

A

1.25

Maximum Power Dissipation

0.8

W

Operating Junction Temperature

+150

ºC

Operating Junction and Storage Temperature Range

-55 to +150

ºC

Thermal Performance

Symbol

Parameter

Limit

Units

Lead Temperature (1/8” from case)

5

S

Junction to Ambient Thermal Resistance (PCB mounted)

100

ºC/W

Note: Surface mounted on FR4 board t < 5 sec.

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

-20

-

-

V

-

95

130

Drain-Source On-State Resistance

-

122

190

mΩ

Gate Threshold Voltage

-0.45

-

-

V

Zero Gate Voltage Drain Current

-

-

-1.0

uA

Gate Body Leakage

-

-

±100

nA

On-State Drain Current

-6

-

-

A

Forward Tranconductance

-

6.5

-

S

Dynamic

Total Gate Charge

-

5.4

10

Gate-Source Charge

-

0.8

-

Gate-Drain Charge

-

1.1

-

nC

Turn-On Delay Time

-

5

25

Turn-On Rise Time

-

19

60

Turn-Off Delay Time

-

95

110

Turn-Off Fall-Time

-

65

80

nS

Input Capacitance

-

447

-

Output Capacitance

-

127

-

Reverse Transfer Capacitance

f=1.0MHz

-

80

-

pF

Source-Drain Diode

Max. Diode Forward Current

-

-

-1.6

A

Diode Forward Voltage

-

-0.8

-1.2

V

Note: Pulse test: pulse width < 300uS, duty cycle < 2%