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AF2301P датащи(PDF) 1 Page - Anachip Corp |
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AF2301P датащи(HTML) 1 Page - Anachip Corp |
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1 / 4 page ![]() AF2301P 20V P-Channel Enhancement Mode MOSFET This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 1/4 Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Pin Assignments 3 2 1 (Top View) 1. G 2. S 3. D Product Summary VDS = - 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ. RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ. Pin Descriptions Pin No. Pin Name Description 1 G Gate 2 S Source 3 D Drain Ordering information AX 2301P X X X PN Package Feature F :MOSFET W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram S G D |
Аналогичный номер детали - AF2301P |
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Аналогичное описание - AF2301P |
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