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FT311D-32L1C-R датащи(PDF) 23 Page - Future Technology Devices International Ltd.

номер детали FT311D-32L1C-R
подробное описание детали  USB Android Host IC
PDF  40 Pages
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производитель  FTDI [Future Technology Devices International Ltd.]
домашняя страница  http://www.ftdichip.com
Logo FTDI - Future Technology Devices International Ltd.

FT311D-32L1C-R датащи(HTML) 23 Page - Future Technology Devices International Ltd.

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Copyright © 2013 Future Technology Devices International Limited
23
DS_FT311D
USB ANDROID HOST IC Datasheet
Version 1.2
Document No.: FT_000660 Clearance No.: FTDI# 305
UVdif
Differential Input
Sensitivity
0.2
V
UDrvZ
Driver Output
Impedance
3
6
9
Ohms
Table 7.4 USB I/O Pin (USBDP, USBDM) Characteristics
Parameter
Description
Minimum
Typical
Maximum
Units
Conditions
VCCK
Power supply of internal
core cells and I/O to core
interface
1.62
1.8
1.98
V
1.8V power
supply
VCC18IO
Power supply of 1.8V
OSC pad
1.62
1.8
1.98
V
1.8V power
supply
TJ
Operating junction
temperature
-40
25
125
°C
Iin
Input leakage current
-10
±1
10
µA
Iin = VCC18IO or
0V
Ioz
Tri-state output leakage
current
-10
±1
10
µA
Table 7.5 Crystal Oscillator 1.8 Volts DC Characteristics
7.2 ESD and Latch-up Specifications
Description
Specification
Human Body Mode (HBM)
± 2000V
Machine mode (MM)
± 200V
Charged Device Mode (CDM)
± 500V
Latch-up
> ± 200mA
Table 7.6 ESD and Latch-up Specifications



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