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MP7529BJS датащи(PDF) 4 Page - Exar Corporation

номер детали MP7529BJS
подробное описание детали  5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter
PDF  12 Pages
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производитель  EXAR [Exar Corporation]
домашняя страница  http://www.exar.com
Logo EXAR - Exar Corporation

MP7529BJS датащи(HTML) 4 Page - Exar Corporation

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MP7529B
4
Rev. 2.00
ELECTRICAL CHARACTERISTICS (CONT’D)
25
°C
Tmin to Tmax
Parameter
Symbol
Min
Typ
Max
Min
Max
Units
Test Conditions/Comments
ANALOG OUTPUTS2
Output Capacitance
COUTA/B
120
120
pF
DAC inputs all 1’s
COUTA/B
50
50
pF
DAC inputs all 0’s
POWER SUPPLY
Supply Current
IDD
1
1
mA
All digital inputs = 0 V or 5 V
2
2
mA
All digital inputs = VIL or VIH
TIMING SPECIFICATIONS4
Chip Select to Write Set-Up Time
tCS
60
80
ns
Chip Select to Write Hold Time
tCH
15
20
ns
DAC Select to Write Set-Up Time
tAS
60
80
ns
DAC Select to Write Hold Time
tAH
15
20
ns
Data Valid to Write Set-Up Time
tDS
60
80
ns
Data Valid to Write Hold Time
tDH
00
ns
Write Pulse Width5
tWR
60
80
ns
NOTES:
Specifications are subject to change without notice
1
Full Scale Range (FSR) is 10V for unipolar mode.
2
Guaranteed but not production tested.
3
Digital input levels should not go below GND or exceed the positive supply voltage, otherwise damage may occur.
4
See timing diagram.
5
tWR = 40ns minimum if tDH > 15ns (@T = 25°C)
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C unless otherwise noted)1, 2, 3
VDD to GND
0 to +7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGND to DGND
+1 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Functionality Guaranteed +0.5 V)
Digital Input Voltage to GND
GND –0.5 to VDD +0.5 V
. . . .
IOUTA, IOUTB to GND
GND –0.5 to VDD +0.5 V
. . . . . . . . . . .
VREFA, VREFB to GND
+25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
VRFBA, VRFBB to GND
+25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–65
°C to +150°C
. . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds)
+300
°C
. . . . . .
Package Power Dissipation Rating to 75
°C
PDIP, SOIC, PLCC
900mW
. . . . . . . . . . . . . . . . . . . . . . . .
Derates above 75
°C
12mW/
°C
. . . . . . . . . . . . . . . . . . . . .
NOTES:
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
2
Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps
(HP5082-2835) from input pin to the supplies.
All inputs have protection diodes which will protect the device from short
transients outside the supplies of less than 100mA for less than 100
µs.
3
GND refers to AGND and DGND.



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