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ADP3167JR датащи(PDF) 10 Page - Analog Devices |
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ADP3167JR датащи(HTML) 10 Page - Analog Devices |
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10 / 16 page ![]() REV. B –10– ADP3160/ADP3167 RSENSE The value of RSENSE is based on the maximum required output current. The current comparator of the ADP3160 has a mini- mum current limit threshold of 142 mV. Note that the 142 mV value cannot be used for the maximum specified nominal current, as headroom is needed for ripple current and tolerances. The current comparator threshold sets the peak of the inductor current yielding a maximum output current, IO, which equals twice the peak inductor current value less half of the peak-to- peak inductor ripple current. From this the maximum value of RSENSE is calculated as: R V I I mV AA m SENSE CS CL MIN O LRIPPLE £ + = + =W ()( ) () .. . 22 142 26 7 6 1 43 (6) In this case, 4 m W was chosen as the closest standard value. Once RSENSE has been chosen, the output current at the point where current limit is reached, IOUT(CL), can be calculated using the maximum current sense threshold of 172 mV: I V R I mV m AA OUT CL CS CL MAX SENSE L RIPPLE () ()( ) () – –. . =¥ = ¥ W = 2 2 172 4 12 2 73 8 (7) At output voltages below 425 mV, the current sense threshold is reduced to 95 mV, and the ripple current is negligible. There- fore, at dead short the output current is reduced to: I mV m A OUT SC () . =¥ = 2 95 4 47 5 W (8) To safely carry the current under maximum load conditions, the sense resistor must have a power rating of at least: PI R R SENSE RMS SENSE SENSE =¥ () 2 (9) where: I I n V V SENSE RMS O OUT IN () 2 2 =¥ ¥ h (10) In this formula, n is the number of phases, and is the converter efficiency, in this case assumed to be 85%. Combining Equations 9 and 10 yields: P AV V mmW R SENSE =¥ ¥ ¥W = 53 4 2 17 085 12 4 950 2 .. . Power MOSFETs In the standard 2-phase application, two pairs of N-channel power MOSFETs must be used with the ADP3160 and ADP3412, one pair as the main (control) switches and the other pair as the synchronous rectifier switches. The main selection parameters for the power MOSFETs are VGS(TH) and RDS(ON). The minimum gate drive voltage (the supply volt- age to the ADP3412) dictates whether standard threshold or logic-level threshold MOSFETs must be used. Since VGATE < 8 V, logic-level threshold MOSFETs (VGS(TH) < 2.5 V) are strongly recommended. The maximum output current IO determines the RDS(ON) require- ment for the power MOSFETs. When the ADP3160 is operating in continuous mode, the simplifying assumption can be made that in each phase one of the two MOSFETs is always conduct- ing the average inductor current. For VIN = 12 V and VOUT = 1.6 V, the duty ratio of the high-side MOSFET is: D V V HSF OUT IN == 13 3 .% (11) The duty ratio of the low-side (synchronous rectifier) MOSFET is: DD LSF HSF == 186 7 –. % (12) The maximum rms current of the high-side MOSFET during normal operation is: I I D I I A HSF MAX O HSF LRIPPLE O () () . =¥ + ¥ Ê ËÁ ˆ ¯˜ = 2 1 3 98 2 2 (13) The maximum rms current of the low-side MOSFET during normal operation is: II D D A LSF MAX HSF MAX LSF HSF () () == 25 (14) The RDS(ON) for each MOSFET can be derived from the allowable dissipation. If 10% of the maximum output power is allowed for MOSFET dissipation, the total dissipation in the four MOSFETs of the 2-phase converter will be: PV I PV A W MOSFET TOTAL MIN O MOSFET TOTAL () () . .. . . =¥ ¥ =¥ ¥ = 01 01 157 534 84 (15) Allocating half of the total dissipation for the pair of high-side MOSFETs and half for the pair of low-side MOSFETs, and assuming that the resistive and switching losses of the high-side MOSFET are equal, the required maximum MOSFET resis- tances will be: R P I R W A m DS ON HS MAX MOSFET TOTAL HSF MAX DS ON HS MAX () ( ) () () () ( ) . (. ) = ¥ = ¥ =W 8 84 89 8 11 2 2 (16) R P I R W A m DS ON LS MAX MOSFET TOTAL LSF MAX DS ON LS MAX () ( ) () () () ( ) . () . = ¥ = ¥ =W 4 84 425 34 2 2 (17) Note that there is a trade-off between converter efficiency and cost. Larger MOSFETs reduce the conduction losses and allow higher efficiency, but increase the system cost. If efficiency is not a major concern, a Fairchild FDB7030L (RDS(ON) = 7 m W nominal, 10 m W worst case) for the high-side and a Fairchild FDB8030L (RDS(ON) = 3.1 m W nominal, 5.6 mW worst case) for the low-side are good choices. The high-side MOSFET dissipation is: PR I VI Q f I VQ f HSF DS ON HS HFS MAX IN L PK G SW G IN RR SW =¥ ()+ ¥¥ ¥ ¥ +¥ ¥ () () () () 2 2 (18) where the second term represents the turn-off loss of the MOSFET and the third term represents the turn-on loss due to the stored charge in the body diode of the low-side MOSFET. (In the second term, QG is the gate charge to be removed from the gate for turn-off and IG is the gate turn-off current. From |
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