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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS4310 датащи(PDF) 1 Page - International Rectifier |
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IRFS4310 датащи(HTML) 1 Page - International Rectifier |
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1 / 11 page  11/3/04 Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96894 www.irf.com 1 D2Pak IRFS4310 TO-220AB IRFB4310 TO-262 IRFSL4310 IRFB4310 IRFS4310 IRFSL4310 HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G S D G S D G S D G VDSS 100V RDS(on) typ. 5.6m : max. 7.0m : ID 140A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dV/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.45 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk ––– 40 980 See Fig. 14, 15, 22a, 22b, 330 14 -55 to + 175 ± 20 2.2 10lb xin (1.1Nxm) 300 Max. 140 c 97 c 550 |
Аналогичный номер детали - IRFS4310 |
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Аналогичное описание - IRFS4310 |
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ссылки URL |
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