IRFS4310 datasheet(4/11 Pages) IRF

номер детали	IRFS4310

подробное описание детали	HEXFET Power MOSFET

PDF	11 Pages

Scroll/Zoom	100%

производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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4 / 11 page

IRF/B/S/SL4310

www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSD, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

TJ = 25°C

TJ = 175°C

VGS = 0V

100

125

150

175

TC , Case Temperature (°C)

100

120

140

LIMITED BY PACKAGE

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

100

105

110

115

120

100

120

VDS, Drain-to-Source Voltage (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

100

125

150

175

Starting TJ, Junction Temperature (°C)

400

800

1200

1600

2000

2400

I D

TOP

12A

17A

BOTTOM

75A

100

1000

VDS , Drain-toSource Voltage (V)

0.1

100

1000

10000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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