www.irf.com

1

4/1/04

Notes

 through … are on page 7

Description

This Digital Audio HEXFET

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

PD - 95852

Features

Amplifier Applications

Efficiency

Ruggedness

Reliability

S

D

G

DIGITAL AUDIO MOSFET

-55

V

93

m

:

150

m

:

31

nC

175

°C

Key Parameters

IRLIB9343

TO-220 Full-Pak

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

W

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Mounting Torque, 6-32 or M3 screw

lbf

yin (Nym)

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

f

–––

3.84

°C/W

Junction-to-Ambient

f

–––

65

Max.

-10

-60

±20

-55

-14

-40 to + 175

10 (1.1)

33

20

0.26