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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLIB9343 датащи(PDF) 2 Page - International Rectifier |
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IRLIB9343 датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRLIB9343 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -55 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -52 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 93 105 m Ω ––– 150 170 VGS(th) Gate Threshold Voltage -1.0 ––– ––– V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -3.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -2.0 µA ––– ––– -25 IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 5.3 ––– ––– S Qg Total Gate Charge ––– 31 47 Qgs Pre-Vth Gate-to-Source Charge ––– 7.1 ––– VGS = -10V Qgd Gate-to-Drain Charge ––– 8.5 ––– ID = -14A Qgodr Gate Charge Overdrive ––– 15 ––– See Fig. 6 and 19 td(on) Turn-On Delay Time ––– 9.5 ––– tr Rise Time ––– 24 ––– td(off) Turn-Off Delay Time ––– 21 ––– ns tf Fall Time ––– 9.5 ––– Ciss Input Capacitance ––– 660 ––– Coss Output Capacitance ––– 160 ––– pF Crss Reverse Transfer Capacitance ––– 72 ––– Coss Effective Output Capacitance ––– 280 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current g A EAR Repetitive Avalanche Energy g mJ Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– -14 (Body Diode) A ISM Pulsed Source Current ––– ––– -60 (Body Diode) c VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 57 86 ns Qrr Reverse Recovery Charge ––– 120 180 nC VGS = -4.5V, ID = -2.7A e ––– 190 See Fig. 14, 15, 17a, 17b VDS = VGS, ID = -250µA VDS = -55V, VGS = 0V VDS = -55V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V ID = -14A Typ. Max. ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to -44V VGS = 0V TJ = 25°C, IF = -14A di/dt = 100A/µs e TJ = 25°C, IS = -14A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -3.4A e MOSFET symbol RG = 2.5Ω VDS = -25V, ID = -14A VDS = -44V Conditions and center of die contact VDD = -28V, VGS = -10V e VDS = -50V |
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