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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AMP04FSZ-R7 датащи(PDF) 5 Page - Analog Devices |
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AMP04FSZ-R7 датащи(HTML) 5 Page - Analog Devices |
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5 / 18 page  AMP04 REV. –4– AMP04E AMP04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit GAIN (G = 100 K/RGAIN) Gain Equation Accuracy G = 1 to 100 0.2 0.5 0.75 % G = 1000 0.4 0.75 % G = 1 to 100 –40 °C ≤ TA ≤ +85°C 0.8 1.0 % Gain Range G 1 1000 1 1000 V/V Nonlinearity G = 1, RL = 5 k Ω 0.005 0.005 % G = 10, RL = 5 k Ω 0.015 0.015 % G = 100, RL = 5 k Ω 0.025 0.025 % Gain Temperature Coefficient ∆G/∆T 30 50 ppm/ °C OUTPUT Output Voltage Swing High VOH RL = 2 k Ω 13 13.4 13 V RL = 2 k Ω –40 °C ≤ T A ≤ +85°C 12.5 12.5 V Output Voltage Swing Low VOL RL = 2 k Ω –40 °C ≤ TA ≤ +85°C –14.5 –14.5 V Output Current Limit Sink 30 30 mA Source 15 15 mA NOISE Noise Voltage Density, RTI eN f = 1 kHz, G = 1 270 270 nV/ √Hz f = 1 kHz, G = 10 45 45 nV/ √Hz f = 100 Hz, G = 100 30 30 nV/ √Hz f = 100 Hz, G = 1000 25 25 nV/ √Hz Noise Current Density, RTI iN f = 100 Hz, G = 100 4 4 pA/ √Hz Input Noise Voltage eN p-p 0.1 Hz to 10 Hz, G = 1 5 5 µV p-p 0.1 Hz to 10 Hz, G = 10 1 1 µV p-p 0.1 Hz to 10 Hz, G = 100 0.5 0.5 µV p-p DYNAMIC RESPONSE Small Signal Bandwidth BW G = 1, –3 dB 700 700 kHz POWER SUPPLY Supply Current ISY 750 900 900 µA –40 °C ≤ TA ≤ +85°C 1100 1100 µA Specifications subject to change without notice. WAFER TEST LIMITS Parameter Symbol Conditions Limit Unit OFFSET VOLTAGE Input Offset Voltage VIOS 300 µV max Output Offset Voltage VOOS 3mV max INPUT CURRENT Input Bias Current IB 40 nA max Input Offset Current IOS 10 nA max INPUT Common-Mode Rejection CMR 0 V ≤ V CM ≤ 3.0 V G = 1 55 dB min G = 10 75 dB min G = 100 80 dB min G = 1000 80 dB min Common-Mode Rejection CMR VS = ±15 V, –12 V ≤ VCM ≤ +12 V G = 1 55 dB min G = 10 75 dB min G = 100 80 dB min (VS = 5 V, VCM = 2.5 V, TA = 25 C unless otherwise noted) C |
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