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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AMP04FSZ-R7 датащи(PDF) 4 Page - Analog Devices |
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AMP04FSZ-R7 датащи(HTML) 4 Page - Analog Devices |
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4 / 18 page  AMP04 REV. –3– AMP04E AMP04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit NOISE Noise Voltage Density, RTI eN f = 1 kHz, G = 1 270 270 nV/ √Hz f = 1 kHz, G = 10 45 45 nV/ √Hz f = 100 Hz, G = 100 30 30 nV/ √Hz f = 100 Hz, G = 1000 25 25 nV/ √Hz Noise Current Density, RTI iN f = 100 Hz, G = 100 4 4 pA/ √Hz Input Noise Voltage eN p-p 0.1 Hz to 10 Hz, G = 1 7 7 µV p-p 0.1 Hz to 10 Hz, G = 10 1.5 1.5 µV p-p 0.1 Hz to 10 Hz, G = 100 0.7 0.7 µV p-p DYNAMIC RESPONSE Small Signal Bandwidth BW G = 1, –3 dB 300 300 kHz POWER SUPPLY Supply Current ISY 550 700 700 µA –40 °C ≤ T A ≤ +85°C 850 850 µA Specifications subject to change without notice. ELECTRICAL CHARACTERISTICS AMP04E AMP04F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit OFFSET VOLTAGE Input Offset Voltage VIOS 80 400 600 µV –40 °C ≤ TA ≤ +85°C 600 900 µV Input Offset Voltage Drift TCVIOS 36 µV/°C Output Offset Voltage VOOS 13 6 mV –40 °C ≤ TA ≤ +85°C6 9 mV Output Offset Voltage Drift TCVOOS 30 50 µV/°C INPUT CURRENT Input Bias Current IB 17 30 40 nA –40 °C ≤ T A ≤ +85°C50 60 nA Input Bias Current Drift TCIB 65 65 pA/ °C Input Offset Current IOS 25 10 nA –40 °C ≤ T A ≤ +85°C15 20 nA Input Offset Current Drift TCIOS 28 28 pA/ °C INPUT Common-Mode Input Resistance 4 4 G Ω Differential Input Resistance 4 4 G Ω Input Voltage Range VIN –12 +12 –12 +12 V Common-Mode Rejection CMR –12 V ≤ VCM ≤ +12 V G = 1 60 80 55 dB G = 10 80 100 75 dB G = 100 90 105 80 dB G = 1000 90 105 80 dB Common-Mode Rejection CMR –11 V ≤ V CM ≤ +11 V –40 °C ≤ TA ≤ +85°C G = 1 55 50 dB G = 10 75 70 dB G = 100 85 75 dB G = 1000 85 75 dB Power Supply Rejection PSRR ±2.5 V ≤ V S ≤ ±18 V –40 °C ≤ TA ≤ +85°C G = 1 75 70 dB G = 10 90 80 dB G = 100 95 85 dB G = 1000 95 85 dB (VS = 15 V, VCM = 0 V, TA = 25 C unless otherwise noted) C |
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