Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PSMN009-100W

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Very low on-state resistance

V

• Fast switching

• Low thermal resistance

I

R

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

SiliconMAX products use the latest

PIN

DESCRIPTION

Philips

Trench

technology

to

achieve

the

lowest

possible

1

gate

on-state

resistance

in

each

package at each voltage rating.

2

drain

Applications:-

3

source

• d.c. to d.c. converters

• switched mode power supplies

tab

drain

The PSMN009-100W is supplied in

the SOT429 (TO247) conventional

leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

-

100

V

V

DGR

Drain-gate voltage

T

-

100

V

V

GS

Gate-source voltage

-

± 20

V

I

D

Continuous drain current

T

-

100

1

A

T

-

79

A

I

DM

Pulsed drain current

T

-

300

A

P

D

Total power dissipation

T

-

300

W

T

Operating junction and

- 55

175

˚C

storage temperature

d

g

s

2

3

1

1 Maximum continuous current limited by package.

October 1999

1

Rev 1.100