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MJD47T4G датащи(PDF) 4 Page - ON Semiconductor

номер детали MJD47T4G
подробное описание детали  High Voltage Power Transistors
PDF  6 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD47T4G датащи(HTML) 4 Page - ON Semiconductor

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MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
http://onsemi.com
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005
500
1
0.2
0.05
0.02
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25
°C
WIRE BOND LIMIT
20
200
10
TC ≤ 25°C
100
ms
1ms
dc
0.01
0.1
0.5
2
5
Figure 6. Active Region Safe Operating Area
100
50
300
CURVES APPLY BELOW
RATED VCEO
MJD50
MJD47
500
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.02
0.2
2
0.1
0.05
0.5
1
5
IC, COLLECTOR CURRENT (AMPS)
TJ = 25°C
VCC = 200 V
IC/IB = 5
2
1
0.5
0.2
0.1
0.05
Figure 7. Turn−On Time
Figure 8. Turn-Off Time
IC, COLLECTOR CURRENT (AMPS)
0.01
1
0.5
0.1
0.05
0.02
0.02
0.2
2
0.1
0.05
0.5
1
tr
td
ts
tf
TJ = 25°C
VCC = 200 V
IC/IB = 5
0.2



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