MJD47T4G datasheet(1/6 Pages) ONSEMI

номер детали	MJD47T4G

подробное описание детали	High Voltage Power Transistors

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производитель	ONSEMI [ON Semiconductor]

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August, 2014 − Rev. 15

1

Publication Order Number:

MJD47/D

MJD47, NJVMJD47T4G,

MJD50, NJVMJD50T4G

High Voltage Power

Transistors

DPAK for Surface Mount Applications

Designed for line operated audio output amplifier, switchmode supply

drivers and other switching applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Electrically Similar to Popular TIP47, and TIP50

• Epoxy Meets UL 94 V−0 @ 0.125 in

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

MJD47, NJVMJD47T4G

MJD50, NJVMJD50T4G

VCEO

250

400

Vdc

Collector−Base Voltage

MJD47, NJVMJD47T4G

MJD50, NJVMJD50T4G

VCB

350

500

Vdc

Emitter−Base Voltage

VEB

5

Vdc

Collector Current − Continuous

IC

1

Adc

Collector Current − Peak

ICM

2

Adc

Base Current

IB

0.6

Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25

°C

PD

15

0.12

W

W/

°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25

°C

PD

1.56

0.0125

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +150

°C

ESD − Human Body Model

HBM

3B

V

ESD − Machine Model

MM

C

V

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

NPN SILICON POWER

TRANSISTORS

1 AMPERE

250, 400 VOLTS, 15 WATTS

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAM

A

= Assembly Location

Y

= Year

WW

= Work Week

Jxx

= Device Code

xx = 47 or 50

G

= Pb−Free Package

AYWW

JxxG

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

3

2

1

4

1

BASE

3

EMITTER

COLLECTOR

2, 4

Аналогичный номер детали - MJD47T4G

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MJD47T4G	115Kb / 5P	High Voltage Power Transistors January, 2011 ??Rev. 10
ON Semiconductor	MJD47T4G	66Kb / 4P	High Voltage Power Transistors January, 2015 ??Rev. 12

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Аналогичное описание - MJD47T4G

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Boca Semiconductor Corp...	BU126	121Kb / 3P	HIGH VOLTAGE POWER TRANSISTORS
Boca Semiconductor Corp...	BU326	129Kb / 3P	HIGH VOLTAGE POWER TRANSISTORS
TAITRON Components Inco...	TIP47	179Kb / 4P	NPN High Voltage Power Transistors
ON Semiconductor	MJD47	115Kb / 5P	High Voltage Power Transistors January, 2011 ??Rev. 10
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Fairchild Semiconductor	MJD350TF	43Kb / 4P	High Voltage Power Transistors
ON Semiconductor	NJVMJD50T4G	81Kb / 6P	High Voltage Power Transistors August, 2014 ??Rev. 15
	MJD340	93Kb / 6P	High Voltage Power Transistors June, 2016 ??Rev. 12
	MJE2955T	66Kb / 4P	High Voltage Power Transistors January, 2015 ??Rev. 12

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