Philips Semiconductors

Product specification

Thyristor

BTH151S-650R

High Repetitive Surge

Fig.2. Maximum on-state dissipation, P

average on-state current, I

a = form factor = I

Fig.3. Maximum permissible rms current I

versus mounting base temperature T

Fig.4. Maximum permissible rms current I

versus mounting base temperature T

Fig.5. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

Fig.6. Maximum permissible repetitive rms on-state

current I

currents, f = 50 Hz; T

Fig.7. Normalised gate trigger voltage

V

0

123456

78

0

5

10

15

a = 1.57

1.9

2.2

2.8

4

IF(AV) / A

Ptot / W

Tmb(max) / C

125

conduction

angle

form

factor

degrees

30

60

90

120

180

4

2.8

2.2

1.9

1.57

a

116

107

98

1

10

100

1000

0

20

40

60

80

100

120

Number of half cycles at 50Hz

ITSM / A

T

ITSM

time

I

Tj initial = 25 C max

T

1

0.01

0.1

1

10

0

5

10

15

20

25

surge duration / s

IT(RMS) / A

10

100

1000

10us

100us

1ms

10ms

T / s

ITSM / A

T

ITSM

time

I

Tj initial = 25 C max

T

dI /dt limit

T

-50

0

50

100

150

0

5

10

15

Tmb / C

IT(RMS) / A

103 C

-50

0

50

100

150

0.4

0.6

0.8

1

1.2

1.4

1.6

Tj / C

VGT(Tj)

VGT(25 C)

March 2001

3

Rev 1.001