Philips Semiconductors

Product specification

Thyristor

BTH151S-650R

High Repetitive Surge

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated thyristor in a plastic envelope,

SYMBOL

PARAMETER

MAX.

UNIT

suitable for surface mounting, intended for

use

in

applications

requiring

high

V

Repetitive peak off-state

bidirectional blocking voltage capability and

voltages

650

V

high thermal cycling performance. This

I

T(AV)

Average on-state current

7.5

A

thyristor has

a

high repetitive surge

I

T(RMS)

RMS on-state current

12

A

specification which makes it suitable for

I

TSM

Non-repetitive peak on-state current

110

A

applications where high inrush currents or

I

TRM

Repetitive peak on-state current

60

A

stall currents are likely to occur on a

repetitive basis.

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

cathode

2

anode

3

gate

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

Repetitive peak off-state

V

RRM

voltages

half sine wave;

-

V

I

T(AV)

Average on-state current

T

-

7.5

A

I

T(RMS)

RMS on-state current

all conduction angles

-

12

A

I

TSM

Non-repetitive peak

half sine wave; T

on-state current

surge

t = 10 ms

-

110

A

t = 8.3 ms

-

121

A

I

TRM

Repetitive peak on-state

t = 10ms,

τ = 3s, T

-

60

A

current

of surges = 100k

I

t = 10 ms

-

61

A

dI

Repetitive rate of rise of

I

-

50

A/

µs

on-state current after

dI

triggering

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

V

RGM

Peak reverse gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

1

2

3

tab

ak

g

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/

µs.

March 2001

1

Rev 1.001