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MEST2G-080-25 датащи(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

номер детали MEST2G-080-25
подробное описание детали  Pin Diode Switch Element
PDF  4 Pages
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производитель  MA-COM [M/A-COM Technology Solutions, Inc.]
домашняя страница  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MEST2G-080-25 датащи(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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Pin Diode Switch Element
Rev. V1
1
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1
MEST2G-080-25
Features
 High Power Handling: 80 W @ 2 GHz or Less
 Low Insertion Loss:
<0.35 dB @ 2 GHz
<0.60 dB @ 6 GHz
 Medium Isolation:
>22 dB @ 2 GHz
>14 dB @ 6 GHz
 RoHS* Compliant
Description
The MEST2G-080-25-CM27 is a thermal to ground
series diode switch element in a Alumina Nitride
package. This part is designed for reliable high
power switch application up to 80 watts. Usable up
to 10 GHz.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Electrical Specifications: TC = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Breakdown Voltage (VBR)
IR = 10 mA, single diode
V
500
Leakage Current (IR)
IF = 100 V, single diode
nA
40
100
Forward Voltage (VF)
IF = 100 mA, single diode
mV
0.93
1.05
Series Resistance (RS)
IF = 100 mA, single diode
Ω
0.97
Junction Capacitance (CJ)
VR = 50 V, 1 MHz, single diode
pF
0.09
—-
Lifetime (t)
IF = 10 mA, IR = 6 mA, @ 50%
ns
1550
I-Region (w)
I-Layer, single diode
µm
80
Return Loss (RL)
IF = 100 mA, 2 GHz
IF = 100 mA, 6 GHz
dB
27
13
31
16
Insertion Loss (IL)
IF = 100 mA, 2 GHz
IF = 100 mA, 6 GHz
dB
0.20
0.45
0.35
0.60
Isolation (ISO)
VR = 10 V, 2 GHz
VR = 10 V, 6 GHz
dB
22
14
25
17


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