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STM32F413XG датащи(PDF) 151 Page - STMicroelectronics

номер детали STM32F413XG
подробное описание детали  ARM-Cortex-M4 32b MCUFPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs
PDF  207 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F413XG датащи(HTML) 151 Page - STMicroelectronics

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STM32F413xG/H
Electrical characteristics
174
6.3.22
VBAT monitoring characteristics
6.3.23
Embedded reference voltage
The parameters given in Table 83 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
Table 82. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-50-
K
Ω
Q
Ratio on VBAT measurement
-
4
-
Er(1)
Error on Q
–1
-
+1
%
TS_vbat(2)(2)
ADC sampling time when reading the VBAT
1 mV accuracy
5-
-
µs
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Table 83. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +125 °C
1.18
1.21
1.24
V
TS_vrefint(1)
ADC sampling time when reading the
internal reference voltage
-10
-
-
µs
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
VDD = 3V ± 10mV
-
3
5
mV
TCoeff(2)
Temperature coefficient
-
-
30
50
ppm/°C
tSTART(2)
Startup time
-
-
6
10
µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design
Table 84. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL
Raw data acquired at temperature of
30 °C VDDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B



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