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STM32F413XG датащи(PDF) 99 Page - STMicroelectronics |
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STM32F413XG датащи(HTML) 99 Page - STMicroelectronics |
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99 / 207 page ![]() DocID029162 Rev 2 99/207 STM32F413xG/H Electrical characteristics 174 Table 35. Typical and maximum current consumption in Standby mode - VDD= 3.6 V Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C TA = 125 °C IDD_STBY Supply current in Standby mode Low-speed oscillator (LSE in low drive mode) and RTC ON 3.7 5.2 20.6 40.5 82.7 µA Low-speed oscillator (LSE in high drive mode) and RTC ON 4.5 6.0 21.4 41.3 83.5 RTC and LSE OFF 2.5 4.0 19.4 39.3 81.5(3) 1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA. 2. Guaranteed by characterization, not tested in production unless otherwise specified. 3. Tested in production. Table 36. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C TA = 125 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Low-speed oscillator (LSE in low-drive mode) and RTC ON 0.74 0.84 1.04 1.24 3.00 5.00 10.00 µA Low-speed oscillator (LSE in high-drive mode) and RTC ON 1.51 1.64 1.89 2.00 3.80 5.80 11.60 RTC and LSE OFF 0.03 0.03 0.04 0.04 2.00 4.00 8.00 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization. |
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