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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ASJD1200R045 датащи(PDF) 2 Page - Micross Components |
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ASJD1200R045 датащи(HTML) 2 Page - Micross Components |
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2 / 4 page  SiC JFET ASJD1200R045 ASJD1200R045 Rev. 0.1 06/11 Micross Components reserves the right to change products or specifications without notice. 2 ADVANCE INFORMATION Min Typ Max Drain Source Blocking Voltage BVDS VGS = 15 V, ID = 600 A 1200 V VDS = 1200 V, VGS = 15 V, Tj = 25 oC 220 VDS = 1200 V, VGS = 15 V, Tj = 150 oC 20 400 VGS = 15 V, VDS = 0V 0.1 0.6 VGS = 15 V, VDS = 1200V 0.1 ID = 40 A, VGS = 2 V, Tj = 25 °C 0.035 0.045 ID = 40 A, VGS = 2 V, Tj = 100 °C 0.07 Gate Threshold Voltage VGS(th) VDS = 1 V, ID = 34mA 6.00 4.00 V Gate Forward Current IGFWD VGS = 2 V 0 mA RG f = 1 MHz, drain source shorted 4 RG(on) VGS >2.7V 0.25 Input Capacitance Ciss 1340 Output Capacitance Coss 206 Reverse Transfer Capacitance Crss 194 Effective Output Capacitance, energy related Co(er) VDS = 0 V to 600 V, VGS = 0 V 110 Turn On Delay ton TBD Rise Time tr TBD Turn Off Delay toff TBD Fall Time tf TBD Turn On Energy Eon TBD Turn Off Energy Eoff TBD Total Switching Energy Ets TBD Turn On Delay ton TBD Rise Time tr TBD Turn Off Delay toff TBD Fall Time tf TBD Turn On Energy Eon TBD Turn Off Energy Eoff TBD Total Switching Energy Ets TBD Total Gate Charge Qg 65 Gate Source Charge Qgs 4 Gate Drain Charge Qgd 54 VDS = 600 V, ID = 40 A, Inductive Load, TJ = 150 oC VDS = 600V, ID = 5 A, VGS = + 2.5 V ns μJ ns μJ nC Dynamic Characteristics VDD = 100 V pF Switching Characteristics VDS = 600 V, ID = 40 A, Inductive Load, TJ = 25 oC On Characteristics Drain Source On resistance Gate Resistance RDS(on) Total Gate Reverse Leakage IGSS μA mA Total Drain Leakage Current IDSS Off Characteristics Value Unit Symbol Parameter Conditions ELECTRICAL CHARACTERISTICS |
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