SiC JFET

ASJD1200R045

ASJD1200R045

Rev. 0.1 06/11

Micross Components reserves the right to change products or specifications without notice.

1

ADVANCE INFORMATION

Normally-ON Trench Silicon

Carbide Power JFET

FEATURES:

• Hermetic TO-258 Packaging

• Available Screening:

- MIL-PRF-19500 Equivalent

- Space Level

- MIL-STD-750 Methods & Conditions

• Inherent Radiation Tolerance >100K TID

• Positive Temperature Coefficient for Ease of Paralleling

• Extremely Fast Switching with No “Tail” Current at 150°C

• 1200 Volt Drain-Source Blocking Voltage

• RDS

• Voltage Controlled

• Low Gate Charge

• Low Intrinsic Capacitance

APPLICATIONS:

• Satellite Solar Inverters

• Mil Spec Power Supplies

- Switch Mode

- Uninterrupted

• Jet Engine Electronics

• Down-hole Electronics (Motor / Compressor Control)

MAXIMUM RATINGS

1200

V

0.045

TBD

μJ

Product Summary

Parameter

Symbol

Conditions

Value

Unit

50

40

Pulsed Drain Current

(1)

150

A

Short Circuit Withstand Time

50

μS

Power Dissipation

TBD

W

Gate Source Voltage

AC

(2)

15 to +15

V

Operating and Storage Temperature

55 to +200*

Lead Temperature for Soldering

1/8" from case < 10 s

260

(1) Limited by pulse width

*Consult factory for 260

Continuous Drain Current

A

THERMAL CHARACTERISTICS

Typ

Max

Thermal Resistance, junction to case

TBD

Thermal Resistance, junction to ambient

TBD

°C / W

Value

Unit

Symbol

Parameter

G (1)

S (3)

D (2,4)

Internal Schematic

1 2 3

4

TO-258

Non-isolated tab version shown.

For isolated tab version, tab (4)

is No Connect.

Die Inside

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information, please visit our

website at www.micross.com