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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MYX29GL01GS11DPIV2 датащи(PDF) 57 Page - Micross Components |
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MYX29GL01GS11DPIV2 датащи(HTML) 57 Page - Micross Components |
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57 / 68 page  MYX29GL01GS11DPIV2 Revision 1.0 - 01/26/2015 *Advanced information. Subject to change without notice. 57 1Gb GL-S MirrorBit® Eclipse™ Flash Memory MYX29GL01GS11DPIV2* Form #: CSI-D-685 Document 001 Figure 13: Page Read Timing Diagram 82 GL-S MirrorBit® Family S29GL_128S_01GS_00_08 October 9, 2013 D a t a S h e e t Figure 10.5 Back to Back Read (tACC) Operation Timing Diagram Figure 10.6 Back to Back Read Operation (tRC)Timing Diagram Note: Back to Back operations, in which CE# remains Low between accesses, requires an address change to initiate the second access. Figure 10.7 Page Read Timing Diagram Note: Word Configuration: Toggle A0, A1, A2, and A3. Amax-A0 CE# OE# DQ15-DQ0 tACC tOE tCE tDF tDF tOH tOH tOH Amax-A0 CE# OE# DQ15-DQ0 tRC tACC tOE tCE tDF tOH tOH Amax-A4 A3-A0 CE# OE# DQ15-DQ0 tACC tOE tCE tPACC Note:WordConfiguration:ToggleA0,A1,A2,andA3. 10.3.2 Asynchronous Write Operations Parameter Description VIO = 2.7V to VCC VIO = 1.65V to VCC Unit JEDEC Std tAVAV tWC Write Cycle Time1 Min 60 ns tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# Low during toggle bit polling Min 15 ns tWLAX tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# High during toggle bit polling Min 0 ns tDVWH tDS Data Setup Time Min 30 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling or following status register read. Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP WE# Pulse Width Min 25 ns tWHWL tWPH WE# Pulse Width High Min 20 ns Note:1.Not100%tested. |
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