AS4SD8M16 datasheet(29/52 Pages) MICROSS

29 / 52 page

SDRAM

AS4SD8M16

Rev. 1.6 March 27, 2015

Micross Components reserves the right to change products or specifications without notice.

SYM

MIN

MAX

UNITS

NOTES

CL = 3

tAC(3)

5.4

CL = 2

tAC(2)

tAH

0.8

tAS

1.5

tCH

2.5

tCL

2.5

CL = 3

tCK(3)

7.5

CL = 2

tCK(2)

tCKH

0.8

tCKS

1.5

tCMH

0.8

tCMS

1.5

tDH

0.8

tDS

1.5

CL = 3

tHZ(3)

5.4

CL = 2

tHZ(2)

tLZ

tOH

tOHN

1.8

tRAS

80,000

tRC

tRCD

tREF

64 / 24

tRFC

tRP

tRRD

0.3

1.2

1 CLK +

7.5ns

tXSR

20, 35

Exit SELF REFRESH to ACTIVE command

Transition time

ACTIVE bank a to ACTIVE bank b command

PRECHARGE command period

CLK low-level width

Data-out hold time (load)

Data-out low-impedance time

Data-in setup time

Data-in hold time

tWR

PARAMETER

WRITE recovery time

AUTO REFRESH period

ACTIVE to READ or WRITE delay

Refresh period (4,096 rows)

ACTIVE to ACTIVE command

ACTIVE to PRECHARGE command

Data-out hold time (no load)

CLK high-level width

-75

Access time from CLK (pos. edge)

Clock cycle time

Data-out high-impedance time

CS\, RAS\, CAS\, WE\, DQM setup time

CS\, RAS\, CAS\, WE\, DQM hold time

CKE setup time

CKE hold time

Address hold time

Address setup time

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING

CONDITIONS5,6,8,9,11

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