AS4SD8M16 datasheet(1/52 Pages) MICROSS

номер детали	AS4SD8M16

подробное описание детали	Self Refresh Mode

PDF	52 Pages

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производитель	MICROSS [Micross Components]

домашняя страница	http://www.micross.com

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1 / 52 page

SDRAM

AS4SD8M16

Rev. 1.6 March 27, 2015

Micross Components reserves the right to change products or specifications without notice.

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V

DD

DQ0

V

DDQ

DQ1

DQ2

V

SSQ

DQ3

DQ4

V

DDQ

DQ5

DQ6

V

SSQ

DQ7

V

DD

DQML

WE\

CAS\

RAS\

CS\

BA0

BA1

A10

A0

A1

A2

A3

V

DD

V

SS

DQ15

V

SSQ

DQ14

DQ13

V

DDQ

DQ12

DQ11

V

SSQ

DQ10

DQ9

V

DDQ

DQ8

V

SS

NC

DQMH

CLK

CKE

NC

A11

A9

A8

A7

A6

A5

A4

Vss

FEATURES

• Full Military temp (-55°C to 125°C) processing available

• Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks)

• Fully synchronous; all signals registered on positive

edge of system clock

• Internal pipelined operation; column address can be

changed every clock cycle

• Internal banks for hiding row access/precharge

• Programmable burst lengths: 1, 2, 4, 8 or full page

• Auto Precharge, includes CONCURRENT AUTO

PRECHARGE and Auto Refresh Modes

• Self Refresh Mode (IT & ET)

• 64ms, 4,096-cycle refresh (IT)

• 24ms 4,096 cycle recfresh (XT)

• WRITE Recovery (t

WR = “2 CLK”)

• LVTTL-compatible inputs and outputs

• Single +3.3V ±0.3V power supply

OPTIONS

MARKING

•

Plastic Package

54-pin TSOPII (400 mil)

DG No. 901

(Pb/Sn finish or RoHS available)

•

Timing (Cycle Time)

7.5ns @ CL = 3 (PC133) or

-75

10ns @ CL = 2 (PC100)

•

Operating Temperature Ranges

-Industrial Temp (-40°C to 85° C)

IT

-Enhanced Temp (-40°C to +105°C)

ET

-Military Temp (-55°C to 125°C)

XT

*Off-center parting line

**CL = CAS (READ) latency

PIN ASSIGNMENT

(Top View)

54-Pin TSOP

Note: “\” indicates an active low.

128 Mb: 8 Meg x 16 SDRAM

Synchronous DRAM Memory

For more products and information

please visit our web site at www.micross.com

KEY TIMING PARAMETERS

SPEED

CLOCK

SETUP

HOLD

GRADE FREQUENCY CL = 2** CL = 3**

TIME

-75

133 MHz

–

5.4ns

1.5ns

0.8ns

-75

100 MHz

6ns

–

1.5ns

0.8ns

ACCESS TIME

Configuration

2 Meg x 16 x 4 banks

Refresh Count

4K

Row Addressing

4K (A0-A11)

Bank Addressing

4 (BA0, BA1)

Column Addressing

512 (A0-A8)

8 Meg x 16

Package may or may not be

assembled with a location notch.

Аналогичный номер детали - AS4SD8M16

производитель	номер детали	датащи	подробное описание детали
Austin Semiconductor	AS4SD8M16	6Mb / 51P	128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD8M16DG-75/ET	6Mb / 51P	128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD8M16DG-75/IT	6Mb / 51P	128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
	AS4SD8M16DG-75/XT	6Mb / 51P	128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory

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Аналогичное описание - AS4SD8M16

производитель	номер детали	датащи	подробное описание детали
Winbond	W94AD6KB	1Mb / 60P	Standard Self Refresh Mode
	W949D6DB	1Mb / 60P	Standard Self Refresh Mode
	W989D6DB	868Kb / 64P	Standard Self Refresh Mode
	W989D6KB	1Mb / 66P	Standard Self Refresh Mode
Integrated Silicon Solu...	IS42RM16800F	465Kb / 27P	Auto refresh and self refresh
	IS42SM16200D	477Kb / 33P	Auto refresh and self refresh
	IS42SM32100D	839Kb / 33P	Auto refresh and self refresh
	IS42SMVM32200M	852Kb / 33P	Auto refresh and self refresh
	IS42VM16160K	865Kb / 34P	Auto refresh and self refresh
Alliance Semiconductor ...	16MX16-DDR1-AS4C16M16D1A	2Mb / 64P	Auto Refresh and Self Refresh

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