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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7580MPbF датащи(PDF) 3 Page - International Rectifier |
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IRF7580MPbF датащи(HTML) 3 Page - International Rectifier |
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3 / 11 page  IRF7580MTRPbF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 13, 2014 D S G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 190 ––– ––– S VDS = 10V, ID = 70A Qg Total Gate Charge ––– 120 180 nC ID = 70A Qgs Gate-to-Source Charge ––– 32 ––– VDS =30V Qgd Gate-to-Drain ("Miller") Charge ––– 36 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 84 ––– ID = 70A, VDS =0V, VGS = 10V td(on) Turn-On Delay Time ––– 20 ––– ns VDD = 30V tr Rise Time ––– 38 ––– ID = 30A td(off) Turn-Off Delay Time ––– 53 ––– RG = 2.7 tf Fall Time ––– 21 ––– VGS = 10V Ciss Input Capacitance ––– 6510 ––– pF VGS = 0V Coss Output Capacitance ––– 610 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 360 ––– ƒ = 1.0MHz Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 620 ––– VGS = 0V, VDS = 0V to 48V Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 770 ––– VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 105 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 460 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ= 25°C,IS = 70A, VGS = 0V dv/dt Peak Diode Recovery ––– 4.1 ––– V/ns TJ =175°C,IS =70A, VDS = 60V trr Reverse Recovery Time ––– 41 ––– ns TJ = 25° C VR = 51V, ––– 44 ––– TJ = 125°C IF = 70A Qrr Reverse Recovery Charge ––– 55 ––– TJ = 25°C di/dt = 100A/µs ––– 71 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.5 ––– A TJ = 25°C nC Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 42µH RG = 50, IAS = 70A, VGS =10V. ISD ≤ 70A, di/dt ≤ 980A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 42µH, RG = 50, IAS = 70A, VGS =10V. |
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