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TSU111ICT датащи(PDF) 19 Page - STMicroelectronics

номер детали TSU111ICT
подробное описание детали  Nanopower (900 nA), high accuracy (150 µV) 5 V CMOS operational amplifier
PDF  30 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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TSU111ICT датащи(HTML) 19 Page - STMicroelectronics

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TSU111
Application information
DocID029790 Rev 2
19/30
Equation 3
Where:
AFT is the temperature acceleration factor
Ea is the activation energy of the technology based on the failure rate
k is the Boltzmann constant (8.6173 x 10-5 eV.K-1)
TU is the temperature of the die when VU is used (°K)
TS is the temperature of the die under temperature stress (°K)
The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and
the temperature acceleration factor (Equation 4).
Equation 4
AF is calculated using the temperature and voltage defined in the mission profile of the
product. The AF value can then be used in Equation 5 to calculate the number of months of
use equivalent to 1000 hours of reliable stress duration.
Equation 5
To evaluate the op amp reliability, a follower stress condition is used where VCC is defined
as a function of the maximum operating voltage and the absolute maximum rating
(as recommended by JEDEC rules).
The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at
different measurement conditions (see Equation 6).
Equation 6
The long term drift parameter (ΔVio), estimating the reliability performance of the product,
is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of
the calculated number of months (Equation 7).
Equation 7
Where Vio drift is the measured drift value in the specified test conditions after 1000 h
stress duration.
A
FT
e
E
a
k
------
1
T
U
1
T
S
=
.
A
F
A
FT
A
FV
×
=
Months
A
F
1000 h
×
12 months
24 h
365.25 days
×
×
=
/
V
CC
maxV
op with Vicm
V
CC
2
=
=
∆V
io
V
iodr ift
month s
=



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