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TSU111ICT датащи(PDF) 18 Page - STMicroelectronics

номер детали TSU111ICT
подробное описание детали  Nanopower (900 nA), high accuracy (150 µV) 5 V CMOS operational amplifier
PDF  30 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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TSU111ICT датащи(HTML) 18 Page - STMicroelectronics

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Application information
TSU111
18/30
DocID029790 Rev 2
5.2
Rail-to-rail input
The TSU111 is built with two complementary PMOS and NMOS input differential pairs.
Thus, the device has a rail-to-rail input, and the input common mode range is extended
from (VCC-) - 0.1 V to (VCC+) + 0.1 V.
The TSU111 has been designed to prevent phase reversal behavior.
5.3
Input offset voltage drift over temperature
The maximum input voltage drift variation over temperature is defined as the offset
variation related to the offset value measured at 25 °C. The operational amplifier is one of
the main circuits of the signal conditioning chain, and the amplifier input offset is a major
contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated
during production at application level. The maximum input voltage drift over temperature
enables the system designer to anticipate the effect of temperature variations.
The maximum input voltage drift over temperature is computed using Equation 1.
Equation 1
Where T = -40 °C and 85 °C.
The TSU111 datasheet maximum values are guaranteed by measurements on a
representative sample size ensuring a Cpk (process capability index) greater than 1.3.
5.4
Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
Voltage acceleration, by changing the applied voltage
Temperature acceleration, by changing the die temperature (below the maximum
junction temperature allowed by the technology) with the ambient temperature.
The voltage acceleration has been defined based on JEDEC results, and is defined using
Equation 2.
Equation 2
Where:
AFV is the voltage acceleration factor
β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1)
VS is the stress voltage used for the accelerated test
VU is the voltage used for the application
The temperature acceleration is driven by the Arrhenius model, and is defined in
Equation 3.
∆V
io
∆T
ma x
V
io T
V
io 25
T
25 °C
=
°C
A
FV
e
β V
S
V
U
.
=



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