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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F401CDU6 датащи(PDF) 78 Page - STMicroelectronics |
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STM32F401CDU6 датащи(HTML) 78 Page - STMicroelectronics |
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78 / 135 page  DocID024738 Rev 6 78/135 STM32F401xB STM32F401xC Electrical characteristics 113 Figure 25. Typical application with a 32.768 kHz crystal 6.3.9 Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. High-speed internal (HSI) RC oscillator Table 39. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization. –8 - 4.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. –1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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