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STM32F401CDU6 датащи(PDF) 69 Page - STMicroelectronics

номер детали STM32F401CDU6
подробное описание детали  ARM Cortex-M4 32b MCUFPU, 105 DMIPS, 256KB Flash/64KB RAM, 11 TIMs, 1 ADC, 11 comm. interfaces
PDF  135 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F401CDU6 датащи(HTML) 69 Page - STMicroelectronics

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Electrical characteristics
STM32F401xB STM32F401xC
69/135
DocID024738 Rev 6
Figure 21. Typical VBAT current consumption (LSE and RTC ON)
Table 30. Typical and maximum current consumption in Standby mode - VDD=3.3 V
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA =
25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
IDD_STBY
Supply current in
Standby mode
Low-speed oscillator (LSE) and RTC ON
2.8
5.0
14.0
28.0
µA
RTC and LSE OFF
2.1
4.0(3)
13.0
27.0(3)
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization, unless otherwise specified.
3. Guaranteed by test in production.
Table 31. Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Conditions(1)
Typ
Max(2)
Unit
TA = 25 °C
TA =
85 °C
TA =
105 °C
VBAT =
1.7 V
VBAT=
2.4 V
VBAT =
3.3 V
VBAT = 3.6 V
IDD_VBAT
Backup
domain supply
current
Low-speed oscillator (LSE) and RTC ON
0.66
0.76
0.97
3.0
5.0
µA
RTC and LSE OFF
0.1
0.1
0.1
2.0
4.0
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization.



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